PART |
Description |
Maker |
APT2X101D120J APT2X100D120J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1200V 100A
|
ADPOW[Advanced Power Technology]
|
APT2X61D100J APT2X60D100J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 1000V 60A
|
ADPOW[Advanced Power Technology]
|
OP-04G OP-04N OP-14G OP-14N |
DUAL OP-AMP, 1.3 MHz BAND WIDTH, UUC14 DIE DUAL OP-AMP, 750 uV OFFSET-MAX, 1.3 MHz BAND WIDTH, UUC14 DIE DUAL OP-AMP, 2000 uV OFFSET-MAX, 1.3 MHz BAND WIDTH, UUC14 DIE
|
Analog Devices, Inc.
|
STE26N50 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE From old datasheet system
|
STMicroelectronics 意法半导
|
APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
BZT52C4V7T |
Planar Die Construction Ultra-Small Surface Mount Package
|
TY Semiconductor Co., Ltd
|
STE40NC60 |
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II POWER MOSFET N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh⑩II MOSFET N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?II MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
AM29DL400T-80EE AM29DL400T-80EI AM29DL400T-80FC AM |
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7306 with Standard Packaging -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7306 with Lead Free Packaging -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7104 with Lead Free Packaging -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7328 with Lead Free Packaging 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7303 with Standard Packaging 80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7380QPBF with Standard Packaging 30V N-Channel PowerTrench MOSFET 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9910 with Standard Packaging 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Industrial version of our popular IRF7103PBF - standard packaging 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7341 with Lead Free Packaging 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7101 with Lead Free Packaging -20V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7322D1TR with Lead Free Packaging on Tape and Reel -20V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7422D2 with Lead Free Packaging 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF9956 with Lead Free Packaging 80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7380 with Standard Packaging 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7301 with Standard Packaging 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7331 with Standard Packaging 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7103 with Standard Packaging 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package - Q101 Qualified; Similar to IRF7103Q with Lead-Free Packaging -20V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package; A IRF7750 with Standard Packaging 20V FETKY - MOSFET and Schottky Diode in a Micro 8 package; A IRF7521D1 with Standard Packaging 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market; Industrial version of our popular IRF7341PBF - standard packaging EEPROM EEPROM EEPROM 80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7380 with Lead Free Packaging -12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7329 with Standard Packaging
|
Air Cost Control Advanced Micro Devices, Inc.
|
APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT Thunderbolt IGBT
|
Microsemi, Corp. Microsemi Corporation
|
FMTS06N20ED |
6.5A 20V Dual Die N-Channel
|
First Components Intern...
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